View 2SK2663_7232016.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

shindengen 2SK2663 copyright & copy;2000 shindengen electric mfg.co.ltd outline dimensions ratings ( f1e90hvx2 ) (unit : mm) 900v 1a n-channel enhancement type hvx-2 series power mosfet case : e-pack ?? switching power supply of ac 240v input ?? high voltage power supply ?? inverter application ?? input capacitance (ciss) is small. especially, input capacitance at 0 biass is small. ?? the static rds(on) is small. ?? the switching time is fast. ?? avalanche resistance guaranteed. features ??absolute maximum ratings ?itc = 25???j item symbol conditions ratings unit storage temperature t stg -55?`150 ?? channel temperature t ch 150 drain-source voltage v dss 900 v gate-source voltage v gss ?}30 continuous drain current?idc?j i d 1 continuous drain current?ipeak) i dp pulse width??10?s, duty cycle??1/100 2 a continuous source current?idc?j i s 1 total power dissipation p t 10 w repetitive avalanche current i ar t ch = 150?? 1 a single avalanche energy e as t ch = 25?? 10 mj repetitive avalanche energy e ar t ch = 25?? 1
copyright & copy;2000 shindengen electric mfg.co.ltd 2SK2663 ( f1e90hvx2 ) hvx-2 series power mosfet electrical characteristics tc = 25 item symbol conditions min. typ. max. unit drain-source breakdown voltage v (br)dss i d = 1 ma, v gs = 0v 900 v zero gate voltage drain current i dss v ds = 900v, v gs = 0v 250 a gate-source leakage current i gss v gs = 30v, v ds = 0v 0. 1 forward tran conductance g fs i d = 0.5a, v ds = 1 0v 0.6 1 .0 s static drain-source on- tate resistance r ds(on) i d = 0.5a, v gs = 1 0v 1 0.5 1 4 gate threshold voltage v th i d = 0.2ma, v ds = 1 0v 2.5 3.0 3.5 v source-drain diode forward voltage v sd i s = 0.5a, v gs = 0v 1 .5 thermal resistance jc junction to case 1 2.5 / total gate charge q g v dd = 400v, v gs = 1 0v, i d = 1 a 1 0.5 nc input capacitance c iss 230 reverse transfer capacitance c rss v ds = 25v, v gs = 0v, f = 1 mh z 5pf output capacitance c oss 23 turn-on time t on i d = 0.5a, v dd = 1 50v, r l = 300 1 0 1 8ns turn-off time t off 50 85
0 0.5 1 1.5 2 0 5 10 15 20 2SK2663 transfer characteristics v ds = 25v typ tc = - 55 c 25 c 100 c 150 c gate-source voltage v gs [v] drain current i d [a]
static drain-source on-state resistance 1 10 100 -50 0 50 100 150 2SK2663 v gs = 10v pulse test typ i d = 0.5a case temperature tc [ c] static drain-source on-state resistance r ds(on) [ w ]
gate threshold voltage 0 1 2 3 4 5 6 -50 0 50 100 150 2SK2663 v ds = 10v i d = 1ma typ case temperature tc [ c] gate threshold voltage v th [v]
safe operating area 0.001 0.01 0.1 1 10 1 10 100 1000 2SK2663 100 m s tc = 25 c single pulse 200 m s 1ms 10ms dc drain-source voltage v ds [v] drain current i d [a] r ds(on) limit
transient thermal impedance 0.01 0.1 1 10 100 2SK2663 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 time t [s] transient thermal impedance q jc(t) [ c/w]
0 20 40 60 80 100 0 50 100 150 2SK2663 single avalanche energy derating [%] starting channel temperature tch [ c] single avalanche energy derating
capacitance 1 10 100 1000 0 20 40 60 80 100 2SK2663 0.005 f=1mhz ta=25 c typ ciss coss crss drain-source voltage v ds [v] capacitance ciss coss crss [pf]
single avalanche current - inductive load 0.1 1 10 2SK2663 0.1 1 10 100 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 v dd = 100v v gs = 15v ? 0v rg = 100 w i as = 1a e as = 10mj e ar = 1mj inductance l [mh] single avalanche current i as [a]
0 20 40 60 80 100 0 50 100 150 2SK2663 power derating power derating [%] case temperature tc [ c]
0 5 10 15 20 0 100 200 300 400 500 2SK2663 0 5 10 15 20 200v gate charge characteristics i d = 1a typ 100v v dd = 400v v gs v ds gate charge qg [nc] drain-source voltage v ds [v] gate-source voltage v gs [v]

▲Up To Search▲

Price & Availability of 2SK2663

	To Download 2SK2663 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .